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| SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10150/D The RF Line Microwave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. * Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching * Characterized with 10 s, 10% Duty Cycle Pulses * Recommended Driver for a Pair of MRF10500 Transistors MRF10150 150 W (PEAK) 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 376B-02, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Peak (1) Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 14 700 4.0 -65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RJC Max 0.25 Unit C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 10 s, 10%.) 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 36 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 65 65 3.5 -- -- -- -- -- -- -- -- 25 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 -- -- -- FUNCTIONAL TESTS Common-Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) Load Mismatch (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB 9.5 40 10 -- -- -- dB % No Degradation in Output Power Z5 D.U.T. RF INPUT C2 L1 C3 C4 + + - C1 Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 RF OUTPUT C1 -- 82 pF 100 Mil Chip Capacitor C2 -- 39 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 100 F, 100 Vdc, Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long Z1-Z9 -- Microstrip, See Details Board Material -- Teflon Glass Laminate Dielectric Thickness = 0.030 r = 2.55, 2 Oz. Copper .625 .15 .275 .081 .09 .522 .625 .081 1.383 .081 1.803 .39 1.751 .081 .583 0.943 .334 .34 .173 1.0 .081 .489 .787 .37 .100 .081 .363 Figure 1. Test Circuit 2 220 POUT, OUTPUT POWER (WATTS) 180 140 100 60 20 0 0 2 4 6 8 10 12 14 16 f = 1090 MHz VCC = 50 V 18 20 22 24 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power f = 1030 MHz Zin 1060 1120 1090 1150 ZOUT (ZOL*) 1150 1120 f = 1030 MHz 1060 1090 Zo = 10 POUT = 150 W Pk f MHz 1030 1060 1090 1120 1150 Zin OHMS 3.8 + j3.5 4.0 + j3.3 4.2 + j3.0 4.4 + j2.3 4.1 + j1.8 VCC = 50 V ZOL* (ZOUT) OHMS 4.6 + j0.7 4.6 + j0.3 4.1 - j1.0 3.8 - j0.8 3.6 - j0.3 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances 3 PACKAGE DIMENSIONS G Q 2 PL 0.25 (0.010) R K D 2 PL M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H K N Q R INCHES MIN MAX 0.890 0.910 0.370 0.400 0.145 0.160 0.140 0.160 0.055 0.065 0.003 0.006 0.650 BSC 0.110 0.130 0.180 0.220 0.390 0.410 0.115 0.135 0.390 0.140 MILLIMETERS MIN MAX 22.61 23.11 9.40 10.16 3.69 4.06 3.56 4.06 1.40 1.65 0.08 0.15 16.51 BSC 2.80 3.30 4.57 5.59 9.91 10.41 2.93 3.42 9.91 10.41 -B- 0.25 (0.010) M TA M B M H E N F 2 PL 0.25 (0.010) -T- M TA M B M -A- C SEATING PLANE STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE CASE 376B-02 ISSUE B Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4 |
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